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| 3SK237 Silicon N-Channel Dual Gate MOSFET Application UHF/VHF RF amplifier CMPAK-4 Features * High gain and low niose * Capable of low voltage operation 3 2 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Marking is "XY". Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 10 10 35 100 125 -55 to +125 Unit V V V mA mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3SK237 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 leakage current Gate2 leakage current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS VG1S(off) VG2S(off) |yfs| Ciss Coss Crss Min 12 Typ -- Max -- Unit V Test conditions ID = 200 A, VG1S = -5 V, VG2S = -5 V IG1 = 10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = 8 V, VG2S = VDS = 0 VG2S = 8 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0, VG2S = 3 V VDS = 10 V, VG2S = 3V, ID = 100 A VDS = 10 V, VG1S = 3V, ID = 100 A VDS = 6V, VG2S = 3 V, ID = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V,ID = 10 mA, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- -- -- 100 nA -------------------------------------------------------------------------------------- -- -- 100 nA -------------------------------------------------------------------------------------- 0 -- 1 mA -------------------------------------------------------------------------------------- Gate1 to source cutoff voltage Gate2 to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure -0.1 -- +1.0 V -------------------------------------------------------------------------------------- -0.1 -- +1.0 V -------------------------------------------------------------------------------------- 17 22.6 -- mS -------------------------------------------------------------------------------------- 2.4 0.7 -- 3.4 1.25 0.021 4.4 2.0 0.05 pF pF pF ------------------------------------------------------------ ------------------------------------------------------------ -------------------------------------------------------------------------------------- PG NF PG NF 24 -- 10 -- 27.2 1.54 14.1 4.15 -- 2.5 -- 6 dB dB dB dB VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz ------------------------------------------------------------ VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 200 MHz -------------------------------------------------------------------------------------- ------------------------------------------------------------ -------------------------------------------------------------------------------------- 3SK237 Maximum channel power dissipation curve Pch (mW) 200 20 Typical output characteristics VG2S = 3 V 1.2 V 150 Channel Power Dissipation I D (mA) 16 12 1.0 V Drain Current 100 8 0.8 V 0.6 V VG1S = 0.4 V 50 4 0 100 150 200 50 Ambient Temperature Ta (C) 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Drain current vs. Gate1 to source voltage 20 2V I D (mA) 16 3V 1.5 V VDS = 6 V I D (mA) Drain current vs. Gate2 to source voltage 20 3V 16 2V 1.5 V V DS = 6 V 12 1V 8 12 1V Drain Current Drain Current 8 4 VG2S = 0.5 V 0 3 4 5 1 2 Gate1 to Source Voltage V G1S (V) 4 VG1S = 0.5 V 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 3SK237 Forward transfer admittance vs. gate1 to source voltage Forward Transfer Admittance |y fs | (mS) 40 VDS = 6 V f = 1 kHz 2.5 V 24 2V 1.5 V 8 0.5 V 0 0.4 0.8 1.2 1.6 2 Gate1 to Source Voltage VG1S (V) 0 1V PG (dB) 32 VG2S = 3 V 32 40 Power gain vs. drain current 24 Power Gain 16 16 VDS = 6 V VG2S = 3 V f = 200 MHz 8 12 16 4 Drain Current I D (mA) 20 8 Noise figure vs. drain current 5 VDS = 6 V VG2S = 3 V f = 200 MHz NF (dB) Noise Figure 4 3 2 1 0 8 12 16 4 Drain Current I D (mA) 20 |
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